Si Wafer Thickness Monitoring System SF-3
Real-time measurement of Si wafer thickness at CMP or BG
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- Product
- Specification
- Configuration
Product
- Non contact, non destructive measurement
- Parameter setting after spectrum analysis
- High speed real-time monitoring during CMP, BG
- Measurement over interlayer such as protection film and window material
- Multi layers analysis
- Original analytical engine (Patent pending)
- Original analytical algorism for thickness measurement (Patented)
- Automatic mapping function for thickness distribution
- Film thickness analysis (5 layers)
- Thickness measurement for Si wafer material
- Grinding evaluation for silicon/ compound semiconductor
- 1.3mm/ next generation 450mm wafer
- 775㎛ 300mm wafer
- TSV wafer (Si layer thickness measurement on via)
- Other materials (SiO2, film)
Specification
Model | SF-3/200 | SF-3/300 | SF-3/1300 |
Silicon Measurement Thickness Range | 6~400μm | 10~775μm | 50~1300μm |
Resin Measurement Thickness Range | 10~1000μm | 20~1500μm | 100~2600μm |
Minimum Sampling Period | 5kHz(200μsec) | ||
Repeatability | less than ±0.01%*1 | ||
Measurement Size | Over about Φ20μm*2 | ||
Measurement Distance | 50mm,80mm,120mm,150mm,200mm | ||
Light source | Semiconductor light source (laser class 3B product) | ||
Analysis Method | FFT analysis, optimization method*3 | ||
Interface | LAN, I/O input/output terminal | ||
Power supply | DC 24 V specification, (AC power supply unit sold separately) | ||
Size | W123×D224×H128mm | ||
Optional Item | 123(W)×224(D)×128(H)mm |
*1:The standard relative deviation of our standard sample AirGap
(approximately 300 μm and about 1000 μm) at time of measurement (n=20).
*2:Design value at time of WD 50 mm probe specification
*3:Used when measuring thinned wafers
*CE acquired products are SF-3/300, SF-3/1300
Configuration
- Product
- Specification
- Configuration