Medical	Medical
Analytical	Zeta Potential Particle Size Molecular Weight Capillary Electrophoresis Spherulite diam./Corr. Length
Spectrometry	Spectrometer Thickness Measurement Light Measurement FPD Evaluation Material Evaluation In-Process Evaluation

Medical

Medical
Analytical

Zeta Potential

Particle Size

Molecular Weight

Capillary Electrophoresis

Spherulite diam./Corr. Length
Spectrometry
Spectrometer

Thickness Measurement
- Thickness Monitor
- Thickness Monitor FE-300
- Spectrum Ellipsometer FE-5000/5000S
- Built-in film thickness monitor　FE-3
- Optical Thickness Meter OPTM series
- Line-Scan Thickness Monitor ™ (In-line type)
- Line-Scan Thickness Monitor ™ (Off-line type)
- Si Wafer Thickness Monitor
- Si Wafer Thickness Monitoring System　SF-3
Light Measurement

FPD Evaluation

Material Evaluation
In-Process Evaluation
List of Product
Discontinued Products

Thickness Monitor FE-300

A film thickness measurement system based on the high precision spectrophotometry features compact size and affordable price. Every necessary component is built in one body for stable measurement data. Although offered at affordable price there is no compromise on accuracy and even optical constant analysis is possible.

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Product
Principle
Specification
Configuration
Measured Data

Product

Feature

Wide film thickness range （1nm～1mm)
Thickness measurement using reflection spectrum
Compact and affordable without compromising high precision
User friendly software interface.
Analytical algorisms are Peak-Valley Method, Fast Fourier Transformation (FFT) Method, Non-linear Least-Squares Method and Optimization Method.
Optical constant analysis (n: Refractive index, k: Extinction coefficient) with Non-linear Least-Squares Method

Measure Item

Absolute reflectance
Film thickness(Up to 10 layers)
Optical constant(n: Refractive index, k: Extinction coefficient)

Application

Function film, Plastic
Transparent film（ITO, Silver nanowire） Retardation film, Polarization film, AR film, PET, PEN, TAC, PP, PC, PE, PVA, Adhesive, Protect film, Hard coat
Semiconductor, Compound semiconductor
Si, oxide film, nitride film, Resist, SiC, GaAs, GaN, InP, InGaAs, Leadframe, SOI, Sapphire
Surface treatment
DLC, Anti-rust, Anti-fog additive
Optical materia
Filter, AR coating
FPD
LCD（CF, ITO, LC, PI, PS）, OLED
Others
HDD, Magnetic tape, Construction material

Principle

Otsuka Electronics provides non-contact and non-destructive thickness measurements with high accuracy using light interference method and own high performance spectrometer. Light interference method is the optical thickness analysis technique using the reflectance in the spectrophotometer optics. Given an example of the coated film on metal substrate, the beam irradiated from above reflects on the coating surface (R1).Also, transmitted beam reflects on the substrate or boundaries (R2). From the light interference behavior caused by optical path difference and phase shift, film thickness can be calculated using reflectance spectrum and refractive index. Analytical algorisms are Peak-Valley Method, Fast Fourier Transformation (FFT) Method, Non-linear Least-Squares Method and Optimization Method.

Specification

Model	FE-300V	FE-300UV	FE-300NIR^*1
General	Standard	Thin film	Thick film	Thick film 　（High resolution）
Sample size	Maximum 8 inch wafer (5mm thickness)
Thickness range 　(nd)	100nm～40μm	10nm～20μm	3μm～300μm	15μm～1.5mm
Wavelength range	450nm～780nm	300nm～800nm	900nm～1600nm	1470nm～1600nm
Accuracy	±0.2nm^*2	±0.2nm^*2	-	-
Repeatability	0.1nm^*3	0.1nm^*3	-	-
Measure time	0.1s～10s
Spot size	Approx φ3mm
Light source	I₂	D₂+ I₂	I₂	I₂
Interface	USB
Size, Weight	280（W)×570（D)×350（H）mm, Approx.24kg
Software
Standard	Peak-valley method, FFT analysis, Optimization, Non-linear least square method
Optional	Material analysis software, Post analysis software, Recipe create , Reference plate

*1 Ask for detail
*2 To guaranteed value of VLSI thickness standard(100nm SiO₂/Si)

Configuration

Configuration / Optics

Software

Measure Menu

Analysis Condition Setting Menu

Measured Data

SiO₂ SiN Thickness Measurement --- Application Sheet FE0002

The semiconductor transistor transmits signals by controlling the current conduction state. There is a built-in insulation film in between the transistors to prevent the current leakage and to avoid the accidental current inflow from another transistor. The insulation film is made of SiO₂ or SiN. SiN has higher dielectric constant than SiO₂ and can be used as a stopper to remove unnecessary SiO₂ in CMP. To assess the efficiency as an insulation film and to keep the precise process management, it is mandatory to make a measurement of these film thicknesses.

Product
Principle
Specification
Configuration
Measured Data

Related Information

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